It is well accepted that Spin Transfer Torque Memory has the potential to be an universal memory since it scores well on metrics like non-volatility, endurance, low operating voltages and ultra fast switching. Rowhammer is a known security vulnerability in recent Dynamic Random Access Memory (DRAM) devices, where repeated access to an array of memory can flip the bits in the adjacent row. Many published scenarios highlight that scaled DRAM below 32nm is exposed to potential hacking attacks because of the Rowhammer problem, owing to reduced spacings in DRAM bits. In this talk we will demonstrate that STT-RAM based memory not only has the potential to scale to future nodes, it does not show security vulnerabilities like Row-hammer that other candidates like DRAM manifest. A unique quantitative machinery for device engineers to model p-MTJ circuits will be presented based on a physics based switching model. The switching model combines elements of quantum transport using the non-equilibrium Green’s function (NEGF) formalism and the spin diffusion equation which provides a qualitative as well as a quantitative agreement with switching voltages in spin torque experiments. The model is further used to explain opposing patterns of switching voltage asymmetry observed in different experiments.

Dr. Samarth Agarwal is a Senior Member of Technical Staff at GLOBALFOUNDRIES, Bangalore where he works on MRAM technology. He has held positions at the IBM Semiconductor R&D Center and COMSOL Multiphysics. He has been involved in the development of scientific software and over 8000 users have accessed simulation tools authored by him on the science and engineering gateway nanoHUB.org. Dr. Agarwal has a Ph.D. in Physics from Purdue University and a B.Tech in Engineering Physics from IIT, Bombay. He has several papers and patents in the area of device variability, quantum transport and micro-magnetics.

There is a significant need to build efficient non-von Neumann computing systems for highly data-centric artificial intelligence related applications. Brain-inspired computing is one such approach that shows significant promise. Memory is expected to play a key role in this form of computing and in particular, phase-change memory (PCM), arguably the most advanced emerging non-volatile memory technology. Brain-inspired computing is likely to be realized in multiple levels of inspiration given a lack of comprehensive understanding of the working principles of the brain. In the first level of inspiration, the idea would be to build computing units where memory and processing co-exist in some form. Computational memory is an example where the physical attributes and state dynamics of memory devices are exploited to perform certain computational tasks in place with very high areal and energy efficiency. In a second level of brain-inspired computing using PCM devices, one could design a co-processor comprising multiple cross-bar arrays of PCM devices to accelerate training of deep neural networks. PCM technology could also play a key role in the space of specialized computing substrates for spiking neural networks and this can be viewed as the third level of brain-inspired computing using these devices

Dr. Ajit Paranjpe, Chief Technology Officer – Veeco Instruments

The promise of ubiquitous connectivity combining high bandwidth (up to 10 GB/s) with ultra-short latency (down to 1 ms) extends applications for fixed and mobile networks beyond cellular communication to broadband connectivity, augmented / virtual reality (AR/VR), autonomous vehicles, and internet of things (IoT). Early deployment and field trials of 5G networks by multiple service providers has begun endorsing the widespread interest and potential of 5G-driven applications and communications.

In this talk, we will review the architectural and device implications of adding the new bands (sub 6 GHz and mmWave) to RF front-ends, and the resulting impact on RF device capability and performance. Compound semiconductor based power amplifiers (GaAs, GaN and InP) are leading candidates for 5G RF front-ends due to their added efficiency at high output power and compact foot-print for multiple input / output (MIMO) architectures.

GaAs based hetero-junction bipolar transistors (HBTs) are likely to be replaced by pseudomorphic high-electron-mobility transistors (p-HEMT), while GaN on Si HEMTs will partially supplant GaN on SiC HEMTs. Recent advances in compound semiconductor epitaxial growth that directly influence device performance will also be discussed. These include tight control of thickness, composition, and doping levels across all die necessary for HEMTs, reduction of RF losses especially for GaN on Si, and migration to larger wafer sizes.

Due to their physical and electronic properties the wide band gap (WBG) materials Silicon Carbide and Gallium Nitride show great potential for power semiconductor devices. With the capability to operate at higher switching speeds and higher temperatures, compared to Si devices, the WBG devices offer performance benefits within certain applications such as Electric and Hybrid Vehicles (EV/HV). Manufacturing of these devices presents challenges as the materials are highly stable, plasma processing is required to pattern the materials in order to manufacture the devices. This presentation will provide a review of how plasma etching and deposition is used to enable certain device structures. Advanced techniques such as Atomic Layer Etching (ALE) of GaN gate recess and Atomic Layer Deposition (ALD) of Al2O3 for gate dielectrics on GaN HEMTs will be shown.

Keywords  – SiC, Silicon Carbide, GaN, Gallium Nitride, Power semiconductor, HEMT, ALD, plasma etch, plasma deposition

Dr. Ajit Paranjpe has been CTO at Veeco since 2011. He oversees Veeco’s technical innovation and organic growth initiatives in areas such as 5G RF and power GaN, photonics, micro-LED, MRAM and advanced packaging.

Dr. Paranjpe has over 25 years of experience in the semiconductor capital equipment industry and previously served in senior technology development and management roles at Media Lario, Therma-Wave, TORREX, CVC and Texas Instruments. He has broad expertise related to the fabrication of semiconductor, opto-electronic and magnetic thin film devices. He has also co-authored over 40 publications and holds more than 50 patents issued in the U.S. and worldwide.

Dr. Paranjpe holds a Bachelor of Technology in Mechanical Engineering from the Indian Institute of Technology and both a Master of Science in Engineering and Doctor of Philosophy from Stanford University, USA.

The miniaturization led advances in microelectronics over 50 years have revolutionized our lives through fast computing and communication. Recent advances in the field are propelled through More than Moore technologies by applications such as robotics, wearable systems, and healthcare etc. Often these applications require electronics to conform to 3D surfaces and this calls for new methods to realize devices and circuits on unconventional substrates such as plastics and paper. This talk will present various approaches (over different time and dimension scales) for obtaining distributed electronics and sensing components on flexible and conformable substrates, especially in context with tactile or electronic skin (e-skin). These approaches range from distributed off-the-shelf electronics, integrated on flexible printed circuit boards to advanced alternatives such as e-skin by printed nanowires, graphene and ultra-thin chips, etc. This talk will also discuss how the technology for sensitive flexible electronic systems is also the key enabler for mobile health and non-invasive health monitoring etc.

Heterostructures based on layers of atomic crystals have a number of properties often unique and very different from those of their individual constituents and of their three dimensional counterparts. The combinations of such crystals in stacks can be used to design the functionalities of such heterostructures. I will show how Raman spectroscopy can be used to fingerprint such heterosctructures, and how these can be exploited in novel light emitting devices, such as single photon emitters, and tuneable light emitting diodes.

Heterostructures based on layers of atomic crystals have a number of properties often unique and very different from those of their individual constituents and of their three dimensional counterparts. The combinations of such crystals in stacks can be used to design the functionalities of such heterostructures. I will show how Raman spectroscopy can be used to fingerprint such heterosctructures, and how these can be exploited in novel light emitting devices, such as single photon emitters, and tuneable light emitting diodes.

MEMS is almost as old as microelectronic transistors. Furthermore, the MEMS community has also been promising similar results as that of microelectronic community of low cost devices. In the microelectronics world, very large scale integration (VLSI) of transistors has led to over a billion devices per chip with significant processing, storage and transmission functionality. However, in the MEMS world, we are still stuck with one or few devices per chip, with the aim to improve the sensitivity, functionality, manufacturability and often size of single or few devices per chip or die. This philosophy of “one design, one fab and one product” will never lead to reduced cost and hence our devices will be good in lab, but impractical in market. We are making nanoscale chips, but the electrical contacts have not shrunk. This means we are wasting significant fabrication area per chip as well. We generally do not like more than one M/NEMS device per chip due to fear of coupling and undesirable parasitic effects. However, we can use these undesirable behaviours to provide for mechanical multiplexing between a large number of sensors on a single chip. In this presentation, I will present recent results of mechanically multiplexing upto 20 sensors on a single M/NEMS chip, along with mathematical techniques and applications of such devices showing promise of VLSI of M/NEMS.

Bhaskar Choubey holds the chair of analogue circuit in University of Siegen. Prior to his current position, he was an associate professor in Oxford University in UK and lecturer in Glasgow University, UK. He received his doctorate from Oxford as a Rhodes scholar. He serves as an associate editor of IEEE Sensors Journal and has served as an AE of IEEE TCAS-II in past. He has been awarded the IEEE Sensors Council early career achievement GOLD award and the Myril B Reed best paper award in IEEE MWSCAS. His research interests are in analogue circuits, image sensors, nonlinear dynamics and M/NEMS.

The tremendous interest in 2D materials over the last decade is driven by their rich physics and device performance that hold great promise for future technological applications. The physical and chemical properties of these materials highly differ from their 3D counterpart. Therefore, the rational synthesis of atomic-films with the desired structure (number of layers, chemical composition, phase, etc.) is a critical prerequisite to fulfill the potential of these exceptional materials.

In this talk, I will address the main challenges in the synthesis of 2D materials in general and transition metal dichalcogenides (TMDs) in particular at the single- or few-layer level. I’ll start by reviewing current methodologies and then will elaborate on the methodologies used in our laboratory, which are based on chemical vapor deposition. In this scheme, the growth of continuous single-layer MoS2 and WS2 on the centimeter square scale, will be described. Moving on from bare TMDs, I will present our methodologies to grow heterostructures and will finalize by describing our efforts to grow complex 3D heterostructures, made of 2D materials, for various applications.

Dr. Ariel Ismach holds a BEng in Materials Engineering from Ben Gurion University of the Negev, and an MA and PhD in Materials and Interfaces from the Faculty of Chemistry, Weizmann Institute. He was awarded a prize from the Israel Chemistry Society for his doctoral thesis.  In 2009 he moved to Berkeley for a post-doctoral position at the Department of Electrical Engineering, University of California–Berkeley and the Materials Science Division of the Lawrence Berkeley Laboratory. In 2011 he joined the group of Prof. Ruoff in the department of Mechanical Engineering, at the University of Texas in Austin, where he leaded a small group of Ph.D. students and postdocs researching the growth and characterization of various 2D materials. He joined the Materials Science and Engineering department at Tel Aviv University in October 2014 where he had established a laboratory dedicated to study the growth and properties of 2D atomic-crystals. His group is working to address basic scientific questions regarding the formation and the structure-property relationship of 2D materials as well as developing new methodologies to engineer such layered materials and their heterostructures for applications in catalysis, energy storage and photovoltaics.

Ravinder Dahiya is Professor of Electronics and Nanoengineering and Engineering and Physical Sciences Research Council (EPSRC) Fellow in the School of Engineering at University of Glasgow. He is the Director of Electronic Systems Design Centre (ESDC) and the leader of Bendable Electronics and Sensing Technologies (BEST) group. His group conducts fundamental research on high-mobility materials based flexible electronics and electronic skin, and their application in robotics, prosthetics and wearable systems.

Prof. Dahiya has published more than 200 research articles, 4 books (3 at various publication stages), and 12 patents (including 7 submitted). He has given more than 100 invited/plenary talks. He has led many international projects including those funded by European Commission, EPSRC, The Royal Society, The Royal Academy of Engineering, and The Scottish Funding Council.

He is Distinguished Lecturer of IEEE Sensors Council and is on the Editorial Boards of Scientific Reports (Nature Group), IEEE Transactions on Robotics and IEEE Sensors Journal. He was the Technical Program Co-Chair (TPC) for IEEE Sensors Conference in 2017 and in continuing in this role for the IEEE Sensors Conference in 2018.

Prof. Dahiya holds EPSRC Fellowship and in past he received Marie Curie Fellowship and Japanese Monbusho Fellowship. He has received several awards and most recent among them are: 2016 IEEE Sensor Council Technical Achievement Award, the 2016 Microelectronic Engineering Young Investigator Award (Elsevier). In 2016, he was included in list of Scottish 40UNDER40.

Photosensors responsive to the short wavelength infrared (SWIR, wavelength range of 1 um to 2.5 um) radiation are used in a variety of applications including environmental monitoring and medical diagnosis. However, conventional SWIR sensors are limited by complex die transfer and bonding processing. Hence our goal is to advance SWIR photodiodes and phototransistors by using a new generation of narrow bandgap conjugated polymers that are processed by solution-processing techniques and allow simple direct deposition. The polymers show photoresponse up to wavelength of 1.7 micron. We develop a physical model to pinpoint the origins of efficiency losses by decoupling the exciton dissociation efficiency and charge collection efficiency, and identify avenues that will improve sensor detectivity. We will compare the metrics of photodiodes to phototransistors in terms of response time, external quantum efficiency, and dark current noise. Lastly we show the various potential applications of organic SWIR devices including spectroscopic identification and image reconstruction.

Dr. Tse Nga Tina Ng is an Associate Professor in the Department of Electrical and Computer Engineering at University of California San Diego (UCSD), USA. She received her PhD in Physical Chemistry under the supervision of Professor John Marohn at Cornell University. Subsequently she worked at Palo Alto Research Center before joining UCSD in 2015. Her work on printed systems has received the 2012 Innovation Award from Flextech Alliance, named Runner-up for the Wall Street Journal Technology Innovation Award, received second place in the 2017 Bell Lab Prize, and named the Hartwell Investigator in 2017. She is a member of the External Advisory Board for Partnership for Research and Education in Materials (PREM) and is on the Editorial Board of the journal Flexible Printed Electronics.

Recent developments in integrated photonics has enabled basic building blocks for a CMOS-compatible all integrated on-chip optical coherence tomography (OCT) based imaging system. These devices include, among other things, on-chip lasers, detectors, modulators, interferometers, couplers, and lenses. The prospect of ‘on-chip’ OCT has particular relevance for diagnosis of early stages of Chronic Obstructive Pulmonary Disease (COPD), one of the major global health problems. The combination of high resolution offered by OCT, along with low cost of mass-fabrication in a CMOS foundry implies it can be a panacea for application in the developing world, where the installation and maintenance cost of high resolution imaging techniques such as x-ray CT-scan is a serious limiting factor. Here, we propose delivering such an on- chip OCT device via standard bronchoscope, identifying the major requirements of such a device for early stage diagnosis and progress monitoring of COPD, and determining the major advantages and limitations of such approach.

Ashim Dhakal is co-founder and chief scientist at Phutung Research Institute in Kathmandu, Nepal, a pioneer institute of science and technology research in Nepal.  He received European Union’s prestigious Erasmus Mundus scholarship and obtained MSc degree in Photonics Engineering jointly from Ghent University, Free University Brussels, University of St. Andrews, Herriot-Watt University. He received PhD degree from Ghent University in 2016, and has since been actively involved in biophotonics research. His research interest include silicon and silicon nitride photonics, spectroscopy, and optical coherence tomography. He has over 40 international publications with an h-index of 11, and is grantee of UK’s EPSRC grant.

Prof. Francesca Iacopi has 20 years’ industrial and academic expertise in Materials for Semiconductor Technologies, with over 120 peer-reviewed publications and 9 granted US patents. Her research emphasis is on the translation of basic scientific advances in nanomaterials and novel device concepts into semiconductor technologies. She was recipient of an MRS Gold Graduate Student Award (2003), an ARC Future Fellowship (2012), and a Global Innovation Award in Washington DC (2014).  Francesca is a Fellow of the Institution of Engineers Australia and Senior Member of IEEE. She is currently Head of Discipline, Communications and Electronics, in the Faculty of Engineering and IT of the University of Technology Sydney.

Dipak Kumar Goswami

Organic Electronics Laboratory, Department of Physics

Indian Institute of Technology Kharagpur

Kharagpur -721302, India

Email: dipak@phy.iitkgp.ac.in

Abstract

I am going to discuss about the ever-evolving advances in organic thin-film based devices, which have fueled many of the developments in the field of flexible and stretchable electronics. After the discovery of conducting polymers, the question arose as to whether organic materials would also find applications as organic semiconductors. Today, owing to the constant improvements of the particular properties of molecular materials – organic semiconductors have made their way for the fabrication of devices, which are flexible and stretchable in nature.  There have been substantial development and optimization over many decades on the growth of these materials on hard and flexible substrates as thin-films and fabrication devices with different functionalities by exploiting their easily tunable electronic properties (e.g. organic field-effect transistors, OFETs). In this talk, I am going to present some of the latest developments in our group on the fabrication of OFET based flexible sensors, which are found to be suitable as affordable healthcare solutions. This includes flexible sensors for continuous monitoring body temperature to detect various health complicacies, such as sleep apnea, febrile seizure for newborn babies or monitoring body temperature patients with poor thermoregulation. We are on the process of developing internet-of-things medical devices (IoT-MD) for more accurate predication of health conditions.

Organic Electronics Laboratory,

Department of Physics,

Indian Institute of Technology Kharagpur

Kharagpur – 721302, India

Email: dipak@phy.iitkgp.ac.in

Web: http://facweb.iitkgp.ernet.in/~dkgoswami/

Prof. Dipak Kumar Goswami is professor in Physics in Indian Institute of Technology Kharagpur (IIT Kharagpur). Prof. Goswami completed his Ph.D degree from Institute of Physics, Bhubaneswar in 2004. Afterwards, he worked in Norwestern University, Advanced Photon Source, USA and Max Planck Institute for Metals Research, Stuttgart, Germany for three years. His areas of interests are growth of thin films, nanostructures and fabrication of various organic electronic devices. He has published about 50 research articles including national and international journals. Some of the works were published in very high impact journals, like, Science, Physical Review Letters, and Journal of American Chemical Society etc.

Silicon Photonics – Past and Future In less than two decades silicon photonics has evolved from a research curiosity to an industry-relevant field with products in the marketplace. Silicon photonics takes advantage of the maturity and existing manufacturing infrastructure of the silicon CMOS world to implement photonic functions, including wavelength-selective functions, high speed modulators or detectors, fiber-coupling structures, sensing structures etc. The key business driver for silicon photonics is the high speed optical transceiver for short-reach interconnect with aggregate data rates of 100 Gb/s and higher. However increasingly other products are emerging, on one hand in highend telecom products and on the other hand in a variety of sensing applications. This plenary paper will review the evolution that the field has gone through and will then focus on new exciting developments with major scientific or application impact.

There is a significant need to build efficient non-von Neumann computing systems for highly data-centric artificial intelligence related applications. Brain-inspired computing is one such approach that shows significant promise. Memory is expected to play a key role in this form of computing and in particular, phase-change memory (PCM), arguably the most advanced emerging non-volatile memory technology. Brain-inspired computing is likely to be realized in multiple levels of inspiration given a lack of comprehensive understanding of the working principles of the brain. In the first level of inspiration, the idea would be to build computing units where memory and processing co-exist in some form. Computational memory is an example where the physical attributes and state dynamics of memory devices are exploited to perform certain computational tasks in place with very high areal and energy efficiency. In a second level of brain-inspired computing using PCM devices, one could design a co-processor comprising multiple cross-bar arrays of PCM devices to accelerate training of deep neural networks. PCM technology could also play a key role in the space of specialized computing substrates for spiking neural networks and this can be viewed as the third level of brain-inspired computing using these devices

We describe a platform able to harness the properties of graphene on silicon wafers in a transfer -free and site -selective fashion. The electrical characteristics of the graphene fall remarkably in line with those of the more established epitaxial graphene on the expensive SiC wafers. This platform offers a pathway for implementation of graphene at the wafer -level, and could greatly benefit further miniaturization, in particular More-than-Moore integration.

Dr. Omkaram (Om) Nalamasu is senior vice president and chief technology officer (CTO) of Applied Materials, Inc. He brings extensive experience and passion to the role of CTO, where he leads the development of disruptive products to address new markets and businesses in partnership with the broader technology ecosystem. Dr. Nalamasu has built a world-class team to support Applied’s leadership in materials engineering. He also serves as president of Applied Ventures, LLC, the venture capital fund of Applied Materials, where he oversees strategic investments in early- and growth-stage companies.

A world-renowned expert in materials science and one of our industry’s most respected forward-thinkers, Dr. Nalamasu has championed a renewed focus on Applied’s global innovation culture through various internal development programs and open innovation methods. He has solidified strategic relationships with universities, government organizations and research institutes around the world.

Dr. Nalamasu joined Applied in 2006 after serving as an NYSTAR Distinguished Professor of materials science and engineering at Rensselaer Polytechnic Institute, where he also served as vice president of research. He has held key research and development leadership positions at AT&T Bell Laboratories, Bell Laboratories/Lucent Technologies, and Agere Systems, Inc., and was director of Bell Laboratories’ Nanofabrication Research Laboratory, MEMS and Waveguides Research, and Condensed Matter Physics organizations.

His research interests include nanomanufacturing, nanopatterning, electronic and photonic materials, and lithography, with special emphasis on applying patterning and materials expertise for device fabrication for electronics, photonics and energy applications.

Dr. Nalamasu has made seminal contributions to the fields of optical lithography and polymeric materials science and technology. He has received numerous awards, authored more than 180 papers, review articles and books, and holds more than 120 worldwide issued patents.

In 2017, Dr. Nalamasu was elected to the U.S. National Academy of Engineering for technical innovation spanning materials development, atomically controlled thin-film fabrication, and commercialization in microelectronics and energy generation and storage. He is a member of the board of directors of The Tech Museum in Silicon Valley and serves on several national and international advisory boards. He received his Ph.D. from the University of British Columbia, Vancouver, Canada.

1. Schmitt¹, L. Mazet², M. M. Frank³, E. A. Cartier³, J. Bruley³, R. Vasudevan⁴, S.V. Kalinin⁴, V. Narayanan³, C. Dubourdieu^1,5

1. Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany
2. INL, CNRS, Ecole Centrale de Lyon, Ecully, France
3. IBM T.J. Watson Research Center, Yorktown Heights, NY, USA
4. Oak Ridge National Laboratory, Oak Ridge, TN, USA
5. Freie Universität Berlin, Berlin, Germany

Ferroelectric HfO₂-based thin films are extensively studied as they show promise for low power devices such as negative capacitance ferroelectric field-effect transistors with reduced sub-threshold slope for logic and memory applications. However, the polycrystalline nanostructure with extended grain boundaries is a potential source of irreproducibility and reliability issues for the electrical performances of the devices. On the other hand, epitaxial ferroelectric perovskites present some flaws such as a high dielectric constant leading to a large depolarization field in thin films and large leakage currents dues to grain boundary conduction paths.

In this presentation, we propose to use a composite material consisting of amorphous and nanocrystalline BaTiO₃ as a ferroelectric gate oxide in metal-oxide semiconductor capacitors. The dielectric permittivity, leakage currents, and memory window will be discussed on the basis of macroscopic current-voltage measurements as well as local investigations by scanning probe microscopy in different electrical modes. We will show that this composite can be integrated into TiN-gated capacitors that exhibit ferroelectric behavior, together with a medium effective permittivity and low leakage currents. Prospect for future nanoelectronic devices will be discussed.

Catherine Dubourdieu is a Full Professor at Freie Universität Berlin and the Head of the Institute “Functional oxides for energy efficient information technology” at the Helmholtz-Zentrum Berlin. She earned an Engineer diploma from Grenoble Institute of Technology in 1992 and a MSc and PhD degrees in Physics from Grenoble University in 1992 and 1995 respectively. After a postdoctoral fellowship at Stevens Institute of Technology, USA, she held a permanent position at the Centre National de la Recherche Scientifique, France, from 1997 to 2016. From 2009 to 2012, she was a Visiting Scientist at the IBM T.J. Watson Research Center, USA. She is a senior member of the IEEE Society and a member of the Executive Committee of the European Materials Research Society.

Jayasimha Atulasimha*

Mechanical and Nuclear Engineering & Electrical and Computer Engineering

Virginia Commonwealth University.

We have demonstrated that voltage induced strain and acoustic waves can switch the magnetization of nanomagnets [1-3] and soft layer of a microscale magnetic tunnel junction (MTJ) [4]. This talk will discuss the above experimental work with complementary modeling that accounts for defects and thermal noise to study the switching error in such “straintronic” devices based on magnetostrictive nanomagnets and their potential to scale to non-volatile memory devices with < 50nm lateral dimensions. We will also explore the suitability of such strain switched nanomagnets to Non-Boolean computing [5].

Further, recent work shows that direct voltage control of magnetic anisotropy (VCMA) in conjunction with magnetic skyrmion states [6, 7] offer a robust mechanism for switching nanomagnets. Our simulations show that inclusion of Dzyaloshinskii-Moriya Interaction (DMI) to force such reversal through a specific (skyrmion) state could be more robust to both thermal noise and defects than precessional VCMA switching schemes [7]. Such a skyrmion’s core also oscillates resonantly with the input voltage induced VCMA and can be exploited for implementing unique neuromorphic functionalities such as a “resonate and fire neuron” in an energy efficient manner [8]. Preliminary experiments in this direction will also be presented.

Acknowledgements:

* The strain control of magnetism research was performed in J. Atulasimha’s group at VCU (N. D’Souza, M. Salehi Fashami, M. M. Al-Rashid, D. Bhattacharya) in collaboration with S. Bandyopadhyay group at VCU (A. Biswas, H. Ahmad, M. A. Abeed), G. P. Carman group (UCLA), J. P. Wang group (U. of Minnesota) and B. Kirby, A. Grutter and D. B. Gopman (NIST); and its application to non-Boolean/neuromorphic computing with C. A. Moritz (U. Mass, Amherst) and A. Trivedi (UIC) groups. Simulations on VCMA switching of skyrmions was performed in Atulasimha’s group (D. Bhattacharya, M. M. Al-Rashid, M. A. Azam) and experiments performed in collaboration with K. L. Wang group (UCLA) and neuromorphic applications with D. Querlioz (U. Paris, Saclay/CNRS). Grants that supported work at VCU:  NSF grants NEB2020: ECCS-1124714, CAREER: CCF-1253370, SHF: CCF-1216614, ECCS 1609303, SHF: CCF-1815033, SRC under NRI task 2203.001; VCU Quest Commercialization Grant and Virginia Microelectronics Center (VMEC) Seed Grant.

REFERENCES:

[1] N. D’Souza, M. Salehi Fashami, S. Bandyopadhyay and J. Atulasimha, Nano Letters, 16, 1069, 2016.

[2] V. Sampath, N. D’Souza, D. Bhattacharya, G. M. Atkinson, S. Bandyopadhyay, and J. Atulasimha,   

     Appl. Phys. Lett., 109, 102403, 2016; Nano Letters, 16, 5681, 2016.

[3] A. Biswas, H. Ahmad, J. Atulasimha, S. Bandyopadhyay, Nano Letters, 17 (6), 3478, 2017.

[4] Z. Zhao, et al., Appl. Phys. Lett., 109, 102403, 2016.

[5] S. D. Manasi, et al., IEEE Trans. Electron Devices, 64, 2835, 2017.

[6] D. Bhattacharya, M. M. Al-Rashid, J. Atulasimha, Scientific Reports, 6, 31272, 2016.

[7] D. Bhattacharya, J. Atulasimha, ACS Appl. Mater. Interfaces, 10 (20), 17455, 2018.

[8] M. A. Azam, D. Bhattacharya, D. Querlioz, J. Atulasimha, accepted, J of App. Phys.,Special Issue Neuromorphic Computation, https://arxiv.org/ftp/arxiv/papers/1806/1806.00076.pdf

Jayasimha Atulasimha is a Qimonda Professor of Mechanical and Nuclear Engineering with a courtesy appointment in Electrical and Computer Engineering at the Virginia Commonwealth University. He has authored or coauthored over 70 journal publications on magnetostrictive materials, magnetization dynamics, spintronics and nanomagnetic computing. His research interests include nanomagnetism, spintronics, multiferroics, nanomagnetic memory and neuromorphic computing devices. He received the NSF CAREER Award for 2013–2018. He is a fellow of the ASME and an IEEE Senior Member.

ABSTRACT: In the 1980s, the era of mesoscopic transport while clearing many mists about the microscopic nature of electrical resistance, simultaneously unveiled new and counter-intuitive aspects about it. An example being that of double barrier tunneling and its hallmark consequence – two “quantum” resistors in series may give rise to an equivalent resistance that is smaller than that of each component! This aspect has been extensively studied in the context of microelectronic applications of resonant tunneling diodes (RTD). In this talk, while keeping the motif of “multiple quantum resistors”, we draw attention to some next generation applications in the realm of spintronics and energy conversion-an area commonly referred to as spin-caloritronics.

Starting from the basic tenets of quantum transport in the double barrier context, we present novel double barrier applications in spintronics based on the physics of resonant spin filtering [1-3]. We demonstrate an ultraenhancement in the tunnel magneto resistance (TMR), well in excess of 2000%, as a result of highly sensitive and tunable spin filtering physics. With myriad applications possible by utilizing such a tunable spin filtering scheme [1-3], we present device designs catered toward emerging logic, memory and sensing functionalities that include (i)ultra-high sensitivity magneto resistance H-field sensors (ii) Improved spin transfer torque switching resulting from the non-trivial spin current profiles, and (iii) high-power output microwave generators and oscillators based on resonant spin-transfer torque dynamics.

We then extend our analysis on how electronic analogs of optical phenomena such as anti-reflection coatings and Fabry-Perot resonances may be used to engineer double barrier tunneling for spintronic and thermoelectric power co-generation [4-6]. These ideas, we believe would be useful in the next generation of spintronic logic-memories that combine in-chip heat to spin current co-harvesting.

[1] N. Chatterji, A. A. Tulapurkar and B. Muralidharan, Appl. Phys. Lett., 105, 232410,(2014).
[2] A. Sharma, A. A. Tulapurkar and B. Muralidharan, IEEE Trans. Elec. Dev., (2016).
[3] A. Sharma, A. A. Tulapurkar and B. Muralidharan, Phys. Rev. Applied, 8, 064014, (2017).
[4] A. Agarwal and B. Muralidharan, Appl. Phys. Lett., 105,013104, (2014).
[5] A. Sharma, A. A. Tulapurkar and B. Muralidharan, Appl. Phys. Lett., 112, 192404, (2018).
[6] S. Mukherjee, P. Priyadarshi and B. Muralidharan, IEEE Trans. Elec. Dev., (2018).

Dr. Bhaskaran Muralidharan obtained his B.Tech in Engineering Physics from the Indian Institute of technology (IIT) Bombay in 2001, his M. S. and Ph. D in Electrical Engineering from Purdue University, West Lafayette, USA in 2003 and 2008 respectively. Between 2008-2012, he was a post-doctoral associate at the Massachusetts Institute of Technology (MIT) and at the Institute for theoretical Physics at the University of Regensburg, Germany. Since 2012, he has been a faculty in the Department of Electrical Engineering at IIT Bombay, where he is currently an associate professor. He was also the recipient of the APS-IUSSTF professorship award in 2014.

Jan Van der Spiegel is a Professor of the Electrical and Systems Engineering Department at the University of Pennsylvania. Dr. Van der Spiegel received his Master’s degree in Electro-Mechanical Engineering and his Ph.D. degree in Electrical Engineering from the University of Leuven, Belgium. His primary research interests are in mixed-mode VLSI design, CMOS vision sensors for polarization imaging, biologically based image sensors and brain-machine interfaces. He is the author of over 200 journal and conference papers and holds 4 patents.

He is a fellow of the IEEE, the recipient of the IEEE Major Educational Innovation Award, the IEEE Third Millennium Medal, the UPS Foundation Distinguished Education Chair and the Bicentennial Class of 1940 Term Chair.

He has served on several IEEE program committees and was the technical program chair of the 2007 International Solid-State Circuit Conference (ISSCC 2007). He is a member of the IEEE Solid-State Circuits Society AdCom, he is an Associate Editor of the Transaction of BioCAS, and a member of the Editorial Board of the IEEE Proceedings, and Section Editor of the Institute of Technology’s Journal of Engineering. He is currently the president of the IEEE SSCS.

A brain-machine interface (BMI) is one of the most important tools in neuroscience research and
neuroprosthetics development. The investigation and development of BMI have achieved significant progress
in the past decade. However, several bottlenecks from the electrical engineering perspective still have to be
overcome. The next generation BMI system needs to feature a bi-directional neural interface with on-chip
neural feature extraction and machine learning. Moreover, the high integration, compact packing and
wireless operation would allow the experiments in freely behaving animals. This presentation will review the
state-of-the-art designs, summarizes the key design requirements and challenges in a BMI system, and
provides insights in both circuit and system level design.

One of the important challenges in the field of thin-film transistors is to improve designs that result in performance speeds to the GHz level. With polymer semiconductors, non-quasistatic circuits such as rectifiers in which the maximum frequency depends on the carrier transit time, have been demonstrated to work to a few 10’s of MHz. The challenge is to realize clocked sequential circuits that operate as speeds much larger than the few 10’s of kHz that have been demonstrated so far. This talk will describe several approaches to increase the performance characteristics of polymer thin-film transistors.  The metrics that we seek to enhance include mobility, on/off current ratio, and short channel length performance. Using a combination of experimental data and theoretical calculations and simulations, we describe device architectures and fabrication methods that improve performance.  This includes nanostructured geometries, gate dielectric engineering, and new materials combinations. We present a detailed theoretical model of charge transport in such polymers that provides considerable insight into the operation of such TFTs. While our work is quite general, many aspects of it apply to flexible electronics.

Ananth Dodabalapur (Fellow, IEEE) received his Ph.D. degrees in Electrical Engineering from The University of Texas at Austin in 1990 respectively. Between 1990 and 2001 he was with Bell Laboratories, NJ. He has published more than 200 articles in refereed journals which have resulted in an H Index of about 90 (Google Scholar). He is a co-recipient of the 2002 National Award for Team Innovation of the American Chemical Society.  Since September 2001, he is with The University of Texas at Austin and is the Motorola Regents Chair Professor in Engineering.

Prof. Amit Lal, SonicMEMS Laboratory, School of Electrical and Computer Engineering, Cornell University

Integrated GHz ultrasonics on planar systems such as CMOS chips are enabled by integration of fast, deep sub-micron transistors and GHz thin film piezoelectric transducers. Sonic wavelengths on the order of a few microns can generate wave packets with spatial extent that is less than the substrate thickness. The role of diffraction of wave packets, coupled with time-of flight have been used to form a useful set of devices. With integration with deeply scaled CMOS that provides GHz electronics, one can envision chip-scale microsystems that provide unprecedented manipulation of sonic energy. We have used these CMOS chips to demonstrate sensing biological ultrasonic impedance to extract fingerprints and tissue type, communicate on a chip using ultrasonic pulses, and implemented ultrasonic memory. A delay block is a circuit that shifts the input signal in time by a desired amount, and delivers a delayed output like the input signal. Delay elements can be used in wide range of applications including phase modulation in clocking systems as well as different digital systems. Furthermore, stable delay elements can be used as a timing reference in delay-locked-loops where the delay can be calibrated across different temperature and process variations. Precision and stability in a delay element block is one of the key specifications that directly impacts all the applications. We have implemented a pulse-echo transmit-receive ultrasonic delay element that is stable over time and has a novel diffraction based zero temperature coefficient of delay at two temperatures. The silicon bulk wave propagation leads to stable operation owing to low loss within silicon and large mode volume. The delay element achieves <6ppm stability and demonstrates zero temperature coefficient at 43C and 72C. A recently implemented oscillator using the delay element in an oscillator configuration achieved <1ppm stability

Abstract:

While Silicon has scaled aggressively by over a factor of a few thousand over the last six decades the progress in packaging has been more modest – a linear factor 4-5 in most cases. In this talk, we will examine the reasons for this lag and what we are doing to fix this imbalance.  Packaging is undergoing a renaissance where chip-to-chip interconnects can approach the densities of on-chip interconnects. We will discuss the technologies, including ones that have emerged, like 3D integration, interposers and Wafer Level Fan-out, as well as newer concepts, that are making this happen and how these can change our thinking on architecture and future manufacturing. Specifically, we will discuss two embodiments: Silicon as the next generation packaging substrate, and Flexible electronics using fan-out wafer level processing. Finally, we’ll discuss how these developments can help put some intelligence into Artificial Intelligence and bring about change in Medical Engineering.

The electronic and photonic circuits and systems that form the backbone of the modern world are predicated on the ability to create high quality semiconductors. Yet, high-performance electronic and photonic grade semiconductors are nearly exclusively grown on lattice matched substrates. This substrate limitation arises due to the fundamental mechanisms of nucleation and growth in state-of-the-art vapor phase growth techniques, which proves to be extremely limiting and costly. Here we demonstrate a platform for growth of compound semiconductors from microscale liquid metal templates. Using these templates, we can control nucleation and growth of these compound semiconductors, enabling single crystalline devices on non-epitaxial substrates. To grow single crystalline material in the desired form-factors, from liquid metal templates on arbitrary substrates presents a significant challenge, as dewetting of the liquid films prevent control over the ultimate material geometry. Through a basic thermodynamic approach, we show that it is possible to control dewetting on nearly any material, and subsequently grow compound semiconductors on these same substrates. Using this approach, we demonstrate growth and characterization of crystalline InP, InAs, and GaP, on silicon nitride, graphene, gadolinium oxide on silicon, and metals. Next, we show that compound semiconductors with multiple stable phases can be grown phase-pure using this approach, using tin phosphide as the example. We show that through tuning the growth conditions, we can control which stable phase of tin phosphide precipitates and grows. This control illustrates that our approach is useful for materials beyond simple III-V and II-IV compounds, which only have one stable phase. By carrying out these growths at significantly non-equilibrium conditions, we demonstrate ternary InGaP alloys, with stoichiometry control over nearly the entire In-Ga composition range. Unlike binary III-V or the Sn-P system, where the stoichiometry of the precipitating compound is nearly insensitive to the growth conditions, the ternary systems are alloys, and consequently extremely sensitive to growth conditions, making growth of uniform materials a potential challenge. We show that through control over the growth conditions, we can achieve high-quality, uniform stoichiometry ternary III-V alloys.

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Fabrication ecosystem and fabrication foundry access.

Design tool introduction, simple device design and simulation.

Basics of the fabrication process, advanced CMOS fabrication technology for PIC and implication of technology on the device and circuits. PIC for communication, computation and sensing.

A brief history of understanding light, Light confinement in the sub-micrometre feature, light guiding, coupling, wavelength filter, polarisation, light detector and light modulation.

Neurobiological processing systems are remarkable computational devices. Their basic computing elements, the neurons, are slow, heterogeneous and stochastic in nature, and yet they outperform today’s most powerful computers at real-world tasks such as vision, audition, and motor control. When compared with digital computers, the brain consumes much less power (~20W) and is highly adaptive. The loss of merely one transistor can wreck a microprocessor, but brains lose neurons all the time without losing functionality. Neuromorphic engineering is an interdisciplinary approach to the design of information processing electronic systems that are inspired by the function, structural organisation, and physical foundations of biological neural systems. This tutorial will introduce to the neuromorphic computing paradigm including the neuromorphic sensors (mainly vision and audition) and the neuromorphic spiking computing substrates.

The past decade has witnessed dramatic progress in the research and development of quantum enabled sensing and computation devices that leverage on superposition and entanglement. In this tutorial I will give an overview of different competing quantum technologies such as superconducting qubit, quantum dots, solid state color centers, and photonics based quantum computing. The discussion will be focussed on the current status of research and development using each platform. Additionally, I will be talking about the basics of qubit operations, requirements on coherence time for practical devices for sensing, challenges and roadblocks faced by each platform.

Ferroelectric materials possess switchable spontaneous electric polarization that is exploited in ferroelectric-based non-volatile memories and logic devices. Further, the strong coupling between polarization and elastic strain makes the ferroelectrics very good piezoelectrics, which make these materials suitable as sensors, transducers, micro-electro-mechanical systems or highly precise actuators. Besides, ferroelectrics possess interesting optical properties, such as birefringence and non-linear optical characteristics. However, interaction of ferroelectric materials with light to control the charge transport phenomena has not got its due attention until recently. Only in the last decade the coupling of polarization with optical properties has received surge in research interest which has been triggered notably by low-band gap ferroelectrics suitable for sunlight spectrum absorption and photovoltaic effects. Since the first report in 2009, the field of ferroelectric photovoltaics has been thriving, achieving quickly an unprecedented power conversion efficiency (PCE) of 8.1%. It has been predicted that an extremely high photovoltaic efficiency up to 19.5% can be achieved from ferroelectric thin films with thickness ~1.2 nm. However, the theoretical upper limit of PCE of ferroelectrics is still an open question, notwithstanding that thermodynamic considerations set the theoretical upper limit of PCE in any single band gap absorber to 44%. In addition to bulk photovoltaic effects in ferreoelectrics, an anomalous photovoltaic effect has been demonstrated in ferroelectric thin films where an above band gap photovoltage (Voc ~16 V) was reported for BiFeO3 (Eg ~ 2.5 eV). Such discoveries have made photoferroelectrics as potential alternatives to conventional photovoltaics based on semiconductor p-n junctions. This tutorial shall provide a consolidated overview of the rapidly progressing field of ferroelectric photovoltaics and address other technologically appealing emerging fields such as photostriction and photocatalytic properties of ferroelectric materials.

Gallium oxide (Ga2O3) is an ultra-wide band gap (~4.8 eV) semiconductor which is at the heart of a fast-expanding materials and device community. Research activities on understanding and developing various aspects of this technology have been gaining an exponential momentum around the world in the last few years for the promises it holds in electronics and optoelectronics.

With a breakdown field that is demonstrated to be much higher than the theoretically achievable maximum limit of gallium nitride (GaN) which is its rival but more-matured wide band gap technology, Ga2O3 is poised to be a leading contender for enabling next-generation power electronic transistors. In the growing market of e-vehicles, on-board chargers, miniature laptop adapters, solar inverters and a host of other applications requiring power conversion, the importance of efficient, compact and high-performance power transistors cannot be over emphasized. In this context, Ga2O3 stands out as an attractive candidate to enable applications which might not be viable with other contemporary device technologies. Besides, alloys of Ga2O3 span a wider range of deep-UV wavelengths compared to other wide band gap materials which is immensely promising for a plethora of applications requiring solar blind detection. One of the key advantages Ga2O3 enjoys is its probable economic edge: it can be grown from the melt, and thus large-area single crystal substrates can be grown which are already commercially available.

In this tutorial, we shall introduce Ga2O3 as an emerging ultra-wide band gap semiconductor and put in perspective where it stands vis-à-vis its promises and superiority over its rival and contemporary device technologies. The basic material properties, its polyphases and the various methods of depositing or growing Ga2O3 will be highlighted. Next, the status and promises of Ga2O3-based transistors for beyond-GaN high-power applications will be discussed. This will include a review of various types of transistors (such as lateral and vertical geometries) reported across the world, and their performance as benchmarked against the more-mature GaN-based devices. Alloys of Ga2O3 and their heterostructures for modulation doped FETs will be elaborated upon. Next, the status and developments in the area of Ga2O3-based deep-UV detectors will be discussed. Various detector architectures and their state-of-art performances will be touched upon with a comparison with those of III-nitride and commercial silicon UV detectors. The possibilities of multi-spectral and broadband UV detection by exploiting the wide range of band gaps of Ga2O3-based alloys and their heterojunctions with III-nitrides will be highlighted.

However, Ga2O3 has certain limitations and challenges, and one of them is the absence of p-type doping. Low electron mobility is another cause of concern for high-power devices. Thus, in the conclusion of this tutorial, the challenges associated with Ga2O3-based technology and the road ahead will be brainstormed.

Heterostructures using various 2D materials, twist-control, novel devices and applications

Concepts in crystal growth, basic thermodynamics of nucleation and growth; Growth from vapor phase; Chemical vapor deposition basics; Growth mechanisms of graphene and kinetic processes; Control over layer number, domain size, substrate interaction; Methods for high rate of production; Growth of semiconducting 2D materials; Basic crystallography of 2D materials; Role of process parameters, formation of planar and vertical heterostructures.

Basics of TMDCs, Prospects of TMDCs as scaled transistors, Possible optoelectronic applications

Overview of 2D materials, Band structure of graphene, tight binding model, bilayer graphene, electronic properties

Andrea Ferrari is Professor of Nanotechnology. He is the Director of the Cambridge Graphene Centre and of the EPSRC Centre for Doctoral Training in Graphene Technology. He is Professorial Fellow of Pembroke College.

Subramanian S. Iyer (Subu) is Distinguished Professor and holds the Charles P. Reames Endowed Chair in the Electrical Engineering Department and a joint appointment in the Materials Science and Engineering Department at the University of California at Los Angeles. He is Director of the Center for Heterogeneous Integration and Performance Scaling (CHIPS). Prior to that he was an IBM Fellow. His key technical contributions have been the development of the world’s first SiGe base HBT, Salicide, electrical fuses, embedded DRAM and 45nm technology node used to make the first generation of truly low power portable devices. He also was among the first to commercialize bonded SOI for CMOS applications through a start-up called SiBond LLC. He has published over 300 papers and holds over 70 patents. He was a Master Inventor at IBM. His current technical interests and work lie in the area of advanced packaging constructs for system-level scaling and new integration and computing paradigms as well as the long-term semiconductor and packaging roadmap for logic, memory and other devices. He has received several outstanding technical achievements and corporate awards at IBM. He is an IEEE Fellow, an APS Fellow and a Distinguished Lecturer of the IEEE EDS and EPS as well as it treasurer of EDS and a member of the Board of Governors of IEEE EPS. He is also a Fellow of the National Academy of Inventors. He is a Distinguished Alumnus of IIT Bombay and received the IEEE Daniel Noble Medal for emerging technologies in 2012. .

David Cahen, born in the Netherlands, is a professor in the Materials and Interfaces department at the Weizmann Institute of Science, WIS, which he chaired between 2007-2012. Born and raised in the Netherlands, he completed a B.Sc. in chemistry & physics at the Hebrew Univ. of Jerusalem (HUJI), a Ph.D. in materials chemistry at Northwestern Univ., and did postdoctoral research in biophysics of photosynthesis at HUJI and WIS. He then joined the WIS, starting work on photoelectrochemical and solid-state solar cells. This expanded into studying chemical aspects of electronic materials and devices, including fundamental chemical limits to device miniaturization and device stability. The latter provided significant scientific bases for practical development of 2nd generation solar cells. In parallel he explored how and when defects in materials can actually improve material quality and device performance. His solar cell interests led to work on hybrid molecular/non-molecular materials and interfaces, which evolved into other present activities, proteins as “dopable” electronic materials. Recent honors include the 2008 Landau Prize for Chemistry and the 2012 Israel Chem, Soc. Prize for excellence, for research on alternative energy sources. A fellow of the AVS and the MRS, he serves on various advisory committees on science and science education, and advises several energy-related companies and initiatives. He directs the WIS’ campus-wide Alternative Sustainable Energy Research Initiative and holds the Rowland and Sylvia Schaefer Professorial Chair in Energy Research. With D. Ginley he edited the MRS/Cambridge Un. Press textbook on Fundamentals of Materials for Energy and Environmental Sustainability.

Roel Baets is full professor at Ghent University (UGent) and is also associated with IMEC. He received an MSc degree in Electrical Engineering from UGent in 1980 and a second MSc degree from Stanford University in 1981. He received a PhD degree from UGent in 1984. From 1984 till 1989 he held a postdoctoral position at IMEC. Since 1989 he has been a professor in the Faculty of Engineering and Architecture of UGent where he founded the Photonics Research Group. From 1990 till 1994 he has also been a part-time professor at Delft University of Technology and from 2004 till 2008 at Eindhoven University of Technology.

Roel Baets has mainly worked in the field of integrated photonics. He has made contributions to research on photonic integrated circuits, both in III-V semiconductors and in silicon, as well as their applications in telecom, datacom, sensing and medicine. Web of Science reports over 600 publications with an h-index over 60.

As part of a team of 8 professors Roel Baets leads the Photonics Research Group. With about 90 researchers this group is involved in numerous (inter)national research programs and has created five spin-off companies. The silicon photonics activities of the group are part of a joint research initiative with IMEC.

Roel Baets is an ERC grantee of the European Research Council. He is a Fellow of the IEEE, of the European Optical Society (EOS) and of the Optical Society (OSA).

Amit Lal is the Robert M. Scharf 1977 Professor in the School of Electrical and Computer Engineering at Cornell University, Ithaca, NY.  He received his B.S. degree (1990) in Electrical Engineering from the California Institute of Technology, and his Ph.D. degree (1996) in Electrical Engineering from the University of California, Berkeley.  His technical interests and activities are in the areas of MEMS, ultrasonics, optics, micromachining, piezoelectric systems, design and analysis of integrated circuits, and applications of radioactivity in microsystems. From 2005-2009, Prof. Lal served as a Program Manager in the Microsystems Technology Office of the Defense Advanced Research Projects Agency (DARPA), where he developed and managed programs in the areas of navigation, low-energy computation, bio-robotics, and atomic microsystems.  He holds ~33 patents and has published more than 185 research papers in the area of microsystem engineering. He is the recipient of the NSF CAREER, and Whitaker Foundation award. With his students, several best paper awards at the IEEE Ultrasonics and Frequency Control Symposium and MEMS conferences.  He is also a recipient of the Department of Defense Exceptional Service Award, and a Best Program Manager Award.

Principal Research Staff Member
IBM Research – Zurich

Abu Sebastian was born in Kerala, India. He received a B. E. (Hons.) degree in Electrical and Electronics Engineering from BITS Pilani, India and M.S. and Ph.D. degrees in Electrical Engineering (minor in Mathematics) from Iowa State University. Since 2006, he is a Research Staff Member at IBM Research – Zurich in Rüschlikon, Switzerland.

His research has spanned several topics broadly related to dynamics and control at the nanometer scale. He was a contributor to several key projects in the space of storage and memory technologies. Most recently, he is actively researching the area of non-von Neumann computing with the intent of connecting the technological elements with applications such as cognitive computing. He has published over 150 articles in journals and conference proceedings. He also holds over 40 granted patents.

Dr. Sebastian is a co-recipient of the 2009 IEEE Control Systems Technology Award and the 2009 IEEE Transactions on Control Systems Technology Outstanding Paper Award. In 2013 he received the IFAC Mechatronic Systems Young Researcher Award for his contributions to the field of mico-/nanoscale mechatronic systems. In 2015 he was awarded the European Research Council (ERC) consolidator grant. In 2016 he was named an IBM Master Inventor and in 2018, he was named a Principal Research Staff Member. Dr. Sebastian served on the editorial board of the journal, Mechatronics from 2008 till 2015. He served on the memory technologies committee of the IEDM from 2015-2016. He currently serves on the Technical Program Committees of European symposium on Phase-Change and Ovonic Sciences (E\PCOS) and Non-volatile memory technology symposium (NVMTS).

Oxford Instruments Plasma
Technology Bristol, UK

Dr Ravi Sundaram is the Market manager for emerging technologies at Oxford Instruments Plasma Technology. He has been involved in 2D materials research in several institutions such as EPFL Switzerland, Max Planck Institute Stuttgart, Germany, IBM T.J Watson Research Labs, NY and Cambridge University where he worked on several aspects of graphene and 2D materials from synthesis, fundamental science to prototype applications in optoelectronics and electronics. He joined Oxford Instruments to lead and coordinate efforts towards 2D materials R&D and is now responsible for scoping out and developing a strategy for emerging technology markets.