Traditional group IV devices are still the workhorse of the industry. However scaling requires innovations like fins, nanowires and nanosheets as well as materials engineering from Si, Ge to strain, gate dielectric and contacts. Papers are solicited on experiments and analysis of novel physics and applications of traditional group IV (Si,Ge) transistors.
Non-volatile charge, spin, thermal and ion based memories like Flash, Ferro-electric RAM, Phase Change Memory (PCM), Magneto Resistive RAM (MRAM/STT-MRAM) and Resistance RAM (RRAM) are the new memories to bridge the gap between magnetic hard disk and cache. Paper are solicited on experiments, modeling and analysis of materials and devices of such memories to enhance their performance in a system and emerging applications of these memory devices.
Growing volumes of data demand new and unconventional information processing techniques fundamentally different from traditional Von-Neumann computing. Some of these include low-power emerging circuits/devices implementing algorithms based on machine-learning and neuromorphic computing principles. Topics of interest include circuits and devices related to spiking, non-spiking neuromorphic, ML, AI computing and applications.
D. Quantum devices and technologies
Technologies that exploit the quantum properties, such as superposition and entanglement, and explicitly address individual quantum states are referred to as quantum technologies (QT). Global companies, including Google, IBM, Intel, Microsoft and Toshiba have recently started to invest heavily in QT to build functional quantum computers and sensors for the masses. The competing technologies include superconducting qubits, trapped ions, electrons on helium, quantum dots, solid state color centers, cold atoms, nuclear magnetic resonance (NMR), discrete-variable photonic (LOQC), continuous variable photonic including other novel approaches such as quantum annealing, Ising machines, adiabatic quantum computing using superconducting or ion arrays, etc. Keeping this revolution in mind, the central theme of this track of the ICEE conference is to compare and contrast various approaches against key metrics such as (1) scalability of platform (2) qubit coherence time (3) ease of qubit control (4) targeted gate fidelity as needed to translate the proof of principal concepts to technologies for the future.
Spintronics or magneto-electronics is an area of active research because of the tremendous potential ahead both in terms of fundamental science and technology. Here, one exploits the spin degree of freedom of the electrons along with its charge. So, Spintronics combines standard microelectronics with spin-dependent effects. Hence, one can expect a new generation of devices with completely different functionality. The advantages of some of the Spintronics devices would be non-volatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared to semiconductor devices. In this conference, we will be discussing and brainstorming about different present and futuristic aspects of science and technology in this area which include magnetic memories, spin torque effects, spin-orbit torque, spin waves, magnetization dynamics, magnetic imaging, skyrmions, spin torque oscillators and diverse theoretical tools.