Papers are solicited in the area of wide band gap (WBG) semiconductor devices. While relevant work pertaining to all areas of materials, devices and systems based on WBG such as SiC, III-nitrides, diamond and Ga2O3 & its alloys are welcome, the focus of this thematic session will be on III-nitrides vs. the emerging family of Ga2O3 devices. Particular emphasis would be laid on all aspects of power device technology including materials growth vis-à-vis the promises and challenges associated with III-nitride and Ga2O3 power transistors. Submissions related to advances on various aspects of III-nitride RF devices, GaN RF HEMTs for 5G, reliability of GaN-based power/RF devices especially on silicon substrates, UV devices including detectors and LEDs, the commercial relevance and promises of WBG devices for systems etc. are highly encouraged. The talks will be aimed at fostering and enabling discussions such as “Will Ga2O3 rival GaN for power electronics?”, “Are WBG devices relevant at all if Silicon performs so well?”, “Do WBG devices for UV emission and detection have any market potential?”, “Will GaN RF lose out to Silicon in the area of 5G?” etc.
Papers are solicited on novel photovoltaic and other energy harvesting devices. Interesting work in any material system and device is most welcome. However, the focus of this symposium will be on Si and perovskite PV. Topical areas include novel Si PV concepts, commercial Si PV, techno-economic analysis, advances on efficiency, manufacturability, scalability, stability and toxicity of perovskite solar cells. The session will try to enable topical discussions, e.g. “Will perovskite PV every be commercialised?”; “What makes lead halide perovskite so special?”; “In light of Si PV’s sucess, is there any point of research on photovoltaics?”; and “What is the best way for academics to contribute to solar research in India”. Papers and talk that further such a discussion are more welcome.
Assistant Professor, IISc, Bengaluru
The scope of the photonics meeting is to bring researchers in the area of guided wave photonics; integrated and fiber, and lasers to share their finding with a broader audiences. We solicit papers that report progress in all branches of integrated photonics, silicon photonics, linear/nonlinear photonics, lasers and optical communication. The paper is expected to present innovative solutions, new device and system concepts or demonstrations. The conference aims to provide a global overview of the current status in this fast-evolving field and a platform for exchange of ideas.
A. Sub-track: Silicon and Integration Photonics
Silicon photonic devices and circuits for communication and sensing applications, wavelength selective devices, light manipulation using guided wave systems, integrated quantum optics, on-chip sensing of bio-photonics, photonic crystal basics and applications, integrated circuit enabled systems, surface plasmon waveguides and devices, on-chip optical cavity for linear and non-linear applications, novel materials for integrated photonics, opto-fludics, theory and modelling, light-matter interaction at nano-scale, integrated photonics based on III-V, II-VI and group IV materials, photonics enabled RF-over-fiber system, light modulators, photodetectors, and integration and active and passive devices.
B. Sub section: Nonlinear Photonics, Lasers and Optical Communications
All aspects of nonlinear photonics and applications. This includes nonlinear optical phenomena in various media such as crystals, fibers and integrated waveguides. On laser sources and systems including high power fiber lasers, solid-state lasers and associated frequency conversion techniques. Materials and devices associated with these systems Components, systems and demonstrations in optical communications in guided and unguided configurations. Ultrafast photonics and phenomena
Traditional group IV devices are still the workhorse of the industry. However scaling requires innovations like fins, nanowires and nanosheets as well as materials engineering from Si, Ge to strain, gate dielectric and contacts. Papers are solicited on experiments and analysis of novel physics and applications of traditional group IV (Si,Ge) transistors.
Non-volatile charge, spin, thermal and ion based memories like Flash, Ferro-electric RAM, Phase Change Memory (PCM), Magneto Resistive RAM (MRAM/STT-MRAM) and Resistance RAM (RRAM) are the new memories to bridge the gap between magnetic hard disk and cache. Paper are solicited on experiments, modeling and analysis of materials and devices of such memories to enhance their performance in a system and emerging applications of these memory devices.
Growing volumes of data demand new and unconventional information processing techniques fundamentally different from traditional Von-Neumann computing. Some of these include low-power emerging circuits/devices implementing algorithms based on machine-learning and neuromorphic computing principles. Topics of interest include circuits and devices related to spiking, non-spiking neuromorphic, ML, AI computing and applications.
D. Quantum devices and technologies
Technologies that exploit the quantum properties, such as superposition and entanglement, and explicitly address individual quantum states are referred to as quantum technologies (QT). Global companies, including Google, IBM, Intel, Microsoft and Toshiba have recently started to invest heavily in QT to build functional quantum computers and sensors for the masses. The competing technologies include superconducting qubits, trapped ions, electrons on helium, quantum dots, solid state color centers, cold atoms, nuclear magnetic resonance (NMR), discrete-variable photonic (LOQC), continuous variable photonic including other novel approaches such as quantum annealing, Ising machines, adiabatic quantum computing using superconducting or ion arrays, etc. Keeping this revolution in mind, the central theme of this track of the ICEE conference is to compare and contrast various approaches against key metrics such as (1) scalability of platform (2) qubit coherence time (3) ease of qubit control (4) targeted gate fidelity as needed to translate the proof of principal concepts to technologies for the future.
Spintronics or magneto-electronics is an area of active research because of the tremendous potential ahead both in terms of fundamental science and technology. Here, one exploits the spin degree of freedom of the electrons along with its charge. So, Spintronics combines standard microelectronics with spin-dependent effects. Hence, one can expect a new generation of devices with completely different functionality. The advantages of some of the Spintronics devices would be non-volatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared to semiconductor devices. In this conference, we will be discussing and brainstorming about different present and futuristic aspects of science and technology in this area which include magnetic memories, spin torque effects, spin-orbit torque, spin waves, magnetization dynamics, magnetic imaging, skyrmions, spin torque oscillators and diverse theoretical tools.
The emergence of graphene as the thinnest electrical conductor with exceptional carrier mobility has triggered a new genre of electronic devices. The discovery of graphene was later followed by stabilization of monolayers of transition metal dichalcogenides, such as MoS2, WSe2, MoSe2 etc, all of which show semiconducting, metallic or even superconducting properties that have been utilized in novel electronic architectures. The ultra-thin nature of the chalcogenide monolayers may overcome several bottlenecks of silicon electronics, such as the drain-induced barrier lowering or short-channel effects, while driving the miniaturization of electronic channels to atomic limit. The semiconducting nature of transition metal dichalcogenide molecular layers have led to functional electronic designs, particularly in the context of sensitizing electronic designs to optical radiation. The van Hove singularities in the density-of-states allows these materials to exhibit outstanding absorption coefficient even when the thickness is reduced to individual molecular layers. An on-chip integration of optical and electronic functionalities is a unique feature of 2D optoelectronics that has captured global fundamental and applied interest in this topic. Beyond high electrical mobility, new devices of tunnel field-effect transistors, or topological FETs are also being developed. One of the key developments in realizing 2D conduction channels for electronic and optoelectronic applications is the synthesis of van der Waals heterostructures by various means from the scotch tape method to chemical vapor deposition. We invite papers from researchers involved in synthesis, device physics and engineering of 2D materials to enrich the discussions on current status and the foreseeable future.
The objective of this track of the ICEE conference is to provide an international technical forum to showcase recent advances in micro/nano mechanical systems and microfluidics. Contributions describing the latest scientific research are solicited in the area of microelectromechanical system, nanoelectromechanical systems, nonlinear effects in mechanical systems, cavity optomechanics, opto-electro-mechanical system, optical M/NEMS sensors, M/NEMS based sensors, actuators and systems, biomechanics, bio-MEMS, mechanobiology, micro/nano fluidics devices, microdroplet generation and manipulations, control and transport of microdroplets and flow cytometry.
Assistant Professor, IISC, Bengaluru
Analytical, numerical, and statistical approaches to modeling and simulation of electronic, optical, hybrid devices; physical and compact models for devices and interconnects, modeling of fabrication processes and equipment, material modeling, parameter extraction, early compact models for conventional, advanced technologies and novel devices, performance evaluation, design for manufacturing, reliability, variability, and technology benchmarking methodologies; mechanical or electro-thermal modeling and simulation; modeling of interactions between process, device, circuit, and packaging technology.
Associate Professor, IIT, Kanpur
Papers are solicited in the areas of THz Sources, Detectors and Receivers, Frequency and Time Domain THz Devices, Components THz Materials, Spectroscopy, Instrumentation THz for applications in security and defense, biomedical imaging and astronomy and atmospheric sciences.
Assistant Professor, IIT, Delhi